Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

Power semiconductor devices are often connected in parallel to increase the current rating of power conversion systems. However, due mismatched circuit parameters or fabrication discrepancies, paralleled can be unbalanced, which potentially leads accelerated aging and long-term reliability issues. The fast-switching speed silicon carbide (SiC) aggravates this problem its higher sensitivity parasitic parameters. Numerous efforts have been dedicated analyzing addressing imbalance issue paralleling SiC devices. This article comprehensively summarizes presents state-of-the-art research regarding Degree is proposed quantify mismatch. Starting with mechanism analysis, different types categorized. Various device package layout that impact distribution investigated. existing solutions including passive methods active concluded work also incorporates insight into future development needs high-power multichip module packaging driving technologies.